International Workshop on Modulation Spectroscopy of Semiconductor Structures (MS3)MISIWICZ, Jan; SITAREK, Piotr.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 319-465, issn 1862-6300, 146 p.Conference Paper

Numerical approximation of thermal conductivity depth distributions by the modulated photoreflectance dataZHU JIANXIN.SPIE proceedings series. 2001, pp 64-68, isbn 0-8194-4341-7Conference Paper

Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe₂OZAKI, Shunji; ADACHI, Sadao.Journal of materials science. Materials in electronics. 2007, Vol 18, issn 0957-4522, S25-S28, SUP1Conference Paper

Isotopic dependence of the E'₀ and E₁ direct gaps in the electronic band structure of SiTSOI, S; RODRIGUEZ, S; RAMDAS, A. K et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153203.1-153203.4, issn 1098-0121Article

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputteringPORNTHEERAPHAT, S; NUKEAW, J.Applied surface science. 2008, Vol 254, Num 23, pp 7851-7854, issn 0169-4332, 4 p.Conference Paper

Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μmRUDNO-RUDZINSKI, W; RYCZKO, K; SEK, G et al.Solid state communications. 2005, Vol 135, Num 4, pp 232-236, issn 0038-1098, 5 p.Article

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; PUUSTINEN, J et al.Journal of luminescence. 2013, Vol 136, pp 347-350, issn 0022-2313, 4 p.Article

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

Photoreflectance spectroscopy study of vertical cavity surface emitting laser structuresMURTAGH, M. E; GUENEBAUT, V; BLAND, S. W et al.Thin solid films. 2004, Vol 450, Num 1, pp 148-150, issn 0040-6090, 3 p.Conference Paper

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gasMOTYKA, M; KUDRAWIEC, R; SYPEREK, M et al.Thin solid films. 2007, Vol 515, Num 11, pp 4662-4665, issn 0040-6090, 4 p.Article

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopyMISIEWICZ, J; KUDRAWIEC, R; SYPEREK, M et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 442-445, issn 0959-8324, 4 p.Conference Paper

Anisotropic optical characteristics of Au-doped rhenium diselenide single crystalsDUMCENCO, D. O; HUANG, W. Y; HUANG, Y. S et al.Journal of alloys and compounds. 2009, Vol 480, Num 1, pp 104-106, issn 0925-8388, 3 p.Conference Paper

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectanceLEE, Jia-Ren; LU, Chien-Rong; LEE, Wei-I et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 562-568, issn 1386-9477, 7 p.Article

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wellsMISIEWICZ, J; KUDRAWIEC, R; MOTYKA, M et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 446-449, issn 0959-8324, 4 p.Conference Paper

Combined photo- and wavelength-modulation spectroscopy of quantum well structuresCECHAVICIUS, B; KAVALIAUSKAS, J; KRIVAITE, G et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 7, pp 1275-1281, issn 0031-8965, 7 p.Conference Paper

Application of photoreflectance spectroscopy to optoelectronic materials and devicesLONG, L; SCHREIBER, J.Thin solid films. 2004, Vol 450, Num 1, pp 60-65, issn 0040-6090, 6 p.Conference Paper

Study of semiconductor surfaces and interfaces using electromodulationPOLLAK, Fred H.Surface and interface analysis. 2001, Vol 31, Num 10, pp 938-953, issn 0142-2421Article

Observation of graded interfaces in strained Si/Si_1-xGe_x layers (0.17 < x < 0.23) using photoreflectanceHALL, D. J; CARLINE, R. T.Applied surface science. 1998, Vol 125, Num 1, pp 1-5, issn 0169-4332Article

Photoreflectance spectroscopy investigation of the temperature dependence of the photovoltage of clean and cesiated GaAs(001)PAGET, D; DAINEKA, D. V.Surface science. 1999, Vol 441, Num 1, pp 149-157, issn 0039-6028Article

A simplified surface photoreflectance measurement systemHO, H. P; WU, S. Y; CHU, P. K et al.Measurement science & technology (Print). 2000, Vol 11, Num 9, pp 1348-1351, issn 0957-0233Article

The dependence of the optical properties on the ⁵⁷Fe doping concentration in GaAs epilayersWUI, Y. H; KANG, T. W; KIM, T. W et al.Applied surface science. 1999, Vol 147, Num 1-4, pp 119-124, issn 0169-4332Article

Optical characterization of CuInSe₂ single crystals prepared by travelling heater methodSHIRAKATA, Sho; MIYAKE, Hideto.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 11, pp 2897-2903, issn 1862-6300, 7 p.Conference Paper

Analysis of photo- and thermo-reflectance signals in the case of transparent layers on an opaque substrateJEROSOLIMSKI, G; REITA, V; TESSIER, G et al.Journal de physique. IV. 2005, Vol 125, pp 419-421, issn 1155-4339, 3 p.Conference Paper

Comparison of optical pump-probe characterization of low-temperature-grown GaAs at well-above-bandgap and near-bandedge wavelengthsHORNG, S.-F; LU, S.-H; YU, J.-S et al.Optical and quantum electronics. 2000, Vol 32, Num 4-5, pp 573-584, issn 0306-8919Conference Paper

Effect of thermal annealing on the optical properties of Li⁺-implanted GaAsOH, Y. T; KANG, T. W; KIM, T. W et al.Applied surface science. 1999, Vol 147, Num 1-4, pp 114-118, issn 0169-4332Article